... gate insulation band栅极绝缘层 gate insulator栅极绝缘层 gate level simulation门电路级模仿 ...
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...非晶硅截然不同,因此需开发的关键技术(Core Technology)繁杂,诸如多晶硅薄膜结晶(Polycrystalline)、栅绝缘层(Gate Insulator)、离子注入(Ion Doping)和离子激活(Activation)等。
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在整个研究过程中,首先开发非晶系材料,闸极绝缘层(gate insulator)等 一般薄膜电晶体所需之重要材料,其次分别完成玻璃基板上及单晶矽基板上薄膜 电晶体之工作特性,包括临线电压质、开/关电流笔、...
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gate insulator traps 栅绝缘膜陷阱
double-layer gate insulator 复合栅绝缘层
surface energy of gate insulator 栅绝缘膜表面能
insulator gate 绝缘栅
insulator gate bipolar transistor 绝缘栅双极型功率晶体管
full self-alignment insulator-covered gate 全自对准介质盖栅工艺
The organic gate insulator layers such as poly(4-vinylphenyl) (PVP) are fabricated by spin coating method.
有机栅极绝缘层材料主要是通过溶液旋涂的方法得到的,如poly(4-vinylphenyl)(PVP)等有机绝缘材料。
参考来源 - Pentacene基有机薄膜晶体管性能改善机制的研究·2,447,543篇论文数据,部分数据来源于NoteExpress
The thickness of gate insulator can also influence the device performance.
研究了栅绝缘层的薄膜厚度对器件的电性能的影响。
It also has the advantage of preferable technique repetition and gate insulator deposition uniformity.
在制作工艺方面具有更高的工艺重复性和栅介质淀积的均匀性。
On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.
与此同时,制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管(TFT)这一课题的需要。
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